This is only a preview of the September 2022 issue of Practical Electronics. You can view 0 of the 72 pages in the full issue. Articles in this series:
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Circuit Surgery
Regular clinic by Ian Bell
Electronically controlled resistance – Part 1
R
ecently, on the EEWeb
Fig.1). A potentiometer has
A
A
a ‘wiper’ terminal which
Control
input
Control
input
connects to a variable location
(R value)
(wiper position)
Wiper
R
R
on a resistance or chain of
resistors. The resistance of
the potentiometer
(between
Electronically
controlled resistance – Part 1B
B
A and B in Fig.1) is fixed
Single resistor (rheostat)
Potentiometer
and the control (mechanical
or electronic) sets the value Fig.1. Electronically controlled resistors.
of the resistance
fromcontrolled
A to
1
1
Electronically
resistance
–1 Part11 1
=
+
+ two
+ ⋯parallel
+
the wiper, and from B to the wiper. This
resistors (as in
𝑅𝑅! 𝑅𝑅"For𝑅𝑅just
𝑅𝑅
𝑅𝑅
#
$
%
can be anything from zero to the A to
Kintaro’s circuit shown in Fig.2) the total
B resistance, with the two summing to
resistance is:
the A-to-B resistance. FETs naturally
1
1
1 𝑅𝑅"1𝑅𝑅#
1
+ ⋯+
form single voltage-controlled resistors= 𝑅𝑅+! = +
𝑅𝑅! 𝑅𝑅" 𝑅𝑅# 𝑅𝑅" 𝑅𝑅
𝑅𝑅%
+$ 𝑅𝑅#
(rheostats), whereas digitally controlled
resistors are available in both rheostat and
In Kintaro’s application one resistor is
potentiometer versions.
fixed (say R1) and the other (R2) is varied to
𝑅𝑅" 𝑅𝑅!#
All components have limits to the range
obtain
𝑅𝑅#! = the desired RT. We can rearrange the
+ 𝑅𝑅!#
"−
of voltages and currents that they can
above 𝑅𝑅
equation
to give the required R2 value
handle, but these may be more restricted
to achieve a specified total resistance RT:
for electronically controlled resistors
𝑅𝑅" 𝑅𝑅!
than similar value mechanical devices.
Electronic control of resistance
𝑅𝑅# =
𝑅𝑅
" − 𝑅𝑅!
Electronically controlled resistors may have
There are a couple of widely used ways
other restrictions such as the requirement
of achieving an electronically controlled
This is not a linear function – see Fig.3 –
for one end to be grounded.
resistor (other approaches are possible).
which shows the R2 value required to obtain
Electronically controlled resistors could
First, field-effect transistors (FETs) can be
RT in the range 1 to 9Ω with R1 = 10Ω. If
be considered in any application where a
used as voltage-controlled resistors. Both
the original control voltage (X in Kintaro’s
mechanical variable resistor, potentiometer
JFETs (junction field-effect transistors) and
post) is linear, and R2 varies linearly with
or trimmer might be used but you want to
MOSFETs (metal-oxide-semiconductor
its control voltage, then it cannot be used
facilitate digital (computer/microcontroller)
field-effect transistors) can be employed
directly to linearly control RT (in Fig.2).
control and thus increase a designs
for this purpose, but JFETs are quite
To achieve a linear control, it would be
functionality. Voltage-controlled resistors
common for this application. Second,
necessary to map the input control voltage
are commonly used to provide analogue
there are numerous digital potentiometer
(Kintaro’s X) to the required control voltage
control of amplifiers’ and filters’ (gain and
ICs available. These typically contain a
for R2. This could possibly be achieved
frequency) response in applications such
network of resistors and switches and are
by a microcontroller measuring voltage
as automatic gain control (AGC), adaptive
designed for use with microcontrollers,
X (via an ADC) and finding the required
filters and voltage-controlled oscillators.
often via a serial bus such as SPI or
resistor control voltage, either using a
I2C. The digital instruction determines
look up table, or via calculation with the
above equation. A DAC could set the R2
the state of the switches, which in turn
Parallel resistors
control the resistance.
Kintaro’s EEWeb post describes a parallel
control voltage.
As with mechanical variable resistors,
combination of a fixed resistor with an
electronically controlled resistors can be
electronically controlled resistor (see
either single resistors (sometimes referred
Fig.2). We will look briefly, and in very
Control
voltage
to as a ‘rheostats’) or potentiometers (see
general terms, at this scenario. One of
RT
R1
R2
(voltage
(fixed)
the best-known formulas in electronics is
controlled)
the total resistance RT of a set of parallel
Simulation
fi
les
Electronically controlled resistance
– Part
12, R3 …RN. The reciprocal
resistors
R 1, R
Most, but not every month, LTSpice
of RT is the sum of the reciprocals of
is used to support descriptions and
parallel resistors:
analysis in Circuit Surgery.
Fig.2. Fixed resistor R1 in parallel with
The examples and files are available
1
1
1
1
1
a voltage-controlled resistor R2 giving a
=
+
+
+ ⋯+
for download from the PE website.
𝑅𝑅%
𝑅𝑅! 𝑅𝑅" 𝑅𝑅# 𝑅𝑅$
total resistance RT.
forum, user Kintaro posted a question about controlling resistance
electronically. ‘Right now, I have two
values known, these are the voltage of a
node (X volt) and a resistor (Y ohm). This
circuit needs to interpret X volt as X ohm,
and then tune the adjustable resistor to Z
ohm (because the Y ohm resistance and
Z ohm resistance in parallel give us the
X ohm resistance. The resulting circuit
should work for all the values of known
values of the voltage node and the resistor.’
The key thing here is the ability to control
a resistance with a voltage – the requirement
for a parallel resistor is specific to Kintaro’s
application and can be achieved if the
adjustable resistor can be set to the required
value. We will look briefly at this and then
consider electronically controlled resistance
more generally.
44
𝑅𝑅" 𝑅𝑅#
𝑅𝑅! =
𝑅𝑅" + 𝑅𝑅#
Practical Electronics | September | 2022
Fig.3. R2 needed for the Fig.2 circuit to achieve the specified total resistance with R1 =10Ω.
We do not know if the above solution
is viable as we do not know the required
response time, or any other details. Another
issue is that the description of X volts to X
ohms would imply low resistance values
with typical circuit voltages in the units
to tens of volts range and this might be
difficult to achieve.
FETs as voltage-controlled resistors
As mentioned above, a JFET is commonly
used to implement voltage-controlled
resistance. The circuit in Fig.4 is an LTspice
schematic which can be used to plot the
characteristics of the device. JFETs have
three terminals: gate, source and drain.
The gate-source voltage (VGS) (supplied by
source VGS in the circuit in Fig.4) controls
the drain current (ID), which will also
depends on the drain-source voltage (VDS)
(supplied by VDS in our schematic). The
polarity of voltages and currents for a JFET
depends on the type of device – n-channel
or p-channel – a categorisation similar
to the difference between NPN and PNP
bipolar junction transistors.
The circuit in Fig.4 uses an n-channel
JFET, which requires a negative gate-source
voltage and typically a positive drainsource voltage, although, as we will
see, negative drain-source voltages can
also be used. The gate-source voltage
controls the drain current, which flows
into the drain. Note that the gate current is
extremely small, so the JEFT is considered
‘voltage controlled’, unlike the bipolar
transistor where we can consider either
the base current or base-emitter voltage as
controlling the collector current.
The LTspice simulation is configured to
sweep both the drain-source voltage and
gate-source voltage over a typical operating
range, which results in the characteristics
plot shown in Fig.5. This is similar to the
characteristic plots you are likely to see in
device data sheets.
The plot in Fig.5 is achieved using a DC
sweep simulation (.dc SPICE directive)
with two swept voltage sources. The first
swept source is VDS – these voltages will
Fig.4. LTspice circuit for plotting JFET characteristics
by varying VGS and VDS.
Practical Electronics | September | 2022
be the x-axis of the plots produced by
LTspice. The second swept source is VGS
– each value this source takes will produce
a separate curve on the plot. The plotted
value is the drain current Id(JI), which
is selected for plotting in the same way as
other types of simulation operation and is
the y-axis of the graph.
The values VDS 0 5 0.01 in the .dc
directive (in Fig.4) specify that the VDS
source (drain-source voltage) will be
stepped from 0 to 5V in 0.01V steps. This
produces a large number of datapoints
on each curve which facilitates zooming
in on the results. The values in the .dc
directive VGS 0 −2 0.25 specify that
the VGS source (gate-source voltage) will
be stepped from 0 to −2V in 0.25V steps
– this is nine values, each of which will
produce a separate curve on the plot
(see Fig.5). (Note that we do not specify
anywhere near as many steps on this
second source sweep as with the first as
too large a number would crowd the graph
with an excess of curve plots.)
Fig.6 shows that we can divide the JFET’s
characteristics into two regions. The (righthand) saturation region occurs at relatively
high drain-source voltages and features a
near constant drain current at a given gatesource voltage. This region is employed
when the JFET is used as an amplifier. The
other (left-hand) region is called the ‘ohmic
region’ and is characterised by increasing
drain-source voltages resulting in increasing
drain current. This is more or less resistive
behaviour, but, as is clearly seen in Fig.6
the current-voltage relationship is not linear
(the plot lines are not straight throughout
the ohmic region). However, if we look
at relatively small drain-source voltages
the lines are relatively straight – it is this
part of the characteristic – within the arc
Fig.5. Typical JFET characteristics showing the ‘ohmic’ (left) and
saturation (right) regions.
45
drawn near the origin that can be used to
implement a voltage-controlled resistor.
Fig.7 shows a zoom in of the plot in Fig.6
to cover the region close to the origin. The
graph has been extended to include negative
drain-source voltages to illustrate the fact
that a JFET voltage-controlled resistor works
with voltages of either polarity across the
‘resistor’, that is, with either polarity of
drain-source voltage. It can be seen that the
current-voltage relationship in Fig.7 is fairly
linear, but not perfectly so.
To get a better insight into the behaviour of
the device as a voltage-controlled resistor it
is useful to plot the resistance values directly.
Ideally, these will be constant (flat line) and
different for each gate-source voltage. LTspice
is able to plot expressions based on circuit
values, so we can plot drain-source voltage
divided by the drain current to get the drainsource resistance. Specifically for the circuit
in Fig.4 this is found using: V(drain)/
Id(J1). A plot of this is given in Fig.8. This
shows the JFET’s resistance varies from about
130Ω to 390Ω as VGS goes from 0V to −2V (at
VDS = 0 V). The resistance is fairly constant
over the plotted drain-source voltage range of
±600 mV and is better at lower magnitudes
Fig.6. Regions of operation in JFET characteristics (ID vs VDS at various VGS).
of gate-source voltage.
The DC sweep command used to obtain Fig.7 and
Fig.8 was slightly different from the one shown in Fig.4,
specifically .dc VDS −1.005 5 0.01 VGS 0 −2 0.25.
One change is that the VDS source sweep was started at near
−1V so that we can plot voltages of both polarities. Also, the
start of the sweep was at the odd-seeming value of −1.005V.
This is to prevent a datapoint occurring at V(drain) = 0,
because this results in zero drain current and hence the
calculated resistance value is also zero. Although the
actual resistance is not zero it cannot be calculated at a
zero voltage, zero current point. This creates an anomaly
in the plot that is avoided by the sweep values used. Note
that although the plots in Fig.7 and Fig.8 are produced
by zooming into LTspice, the large number of datapoints
means that the curves are still accurate.
Fig.8 shows that the JFET’s resistance is not completely
constant with changing drain-source voltage. This will
tend to cause distortion if the JFET ‘resistor’ is used in
a signal path (we discussed distortion in detail in the
Fig.7. JFET characteristics for various gate-source voltages for drainlast three Circuit Surgery articles). The JFET’s resistance
source voltages around zero.
tends to increase as the drain-source voltage increases.
It is possible to compensate for this by feeding back the
drain-source voltage to increase the gate-source voltage
at higher drain-source voltages. This will increase the
drain current (with respect to a device with no feedback),
resulting in a lower effective resistance.
A circuit to implement a more constant resistance is
shown in Fig.9. The resistors used for the feedback must
be large to prevent loading any circuit in which the JFET
is used as a voltage-controlled resistor. 1MΩ is used in
Fig.9, although we do not have any other circuitry to worry
about. Hundreds of kilohms to megohms are typically
used in such circuits.
Simulation results for the circuit in Fig.9 are shown in
Fig.10 in a similar form to Fig.7 and Fig.8. The DC sweep
was changed to account for the fact that the resistors R1
Fig.8. JFET drain-source resistance for various gatesource voltages for drain-source voltages around zero.
46
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Input
R1
+ U1
R2
Control
R3
Output
–
J1
R4
R5
Fig.11. Amplifier with gain control using a JFET
voltage-controlled resistor.
more expensive, for example, at the time of wiring
a single 2N3819 is 93p from Mouser, whereas the
VCR4N is £11.54.
Finally, Fig.11 shows one example of a circuit
using a JFET voltage-controlled resistor. This is an
amplifier with voltage-controlled gain. Resistor R1
and the voltage-controlled resistor formed by the
JFET (J1) and the feedback resistors (R2 and R3) form
a potential divider. The output level from this will
depend on the controlled resistance value. It is then
buffered and amplified by the op amp. The control
voltage is negative (as in the circuits in Fig.4 and
Fig.9), but this is not a major problem with a typical
split supply for an op amp circuit. The input signal
needs be centred on 0V and of sufficiently small
amplitude to keep the JEFT circuit operating at a
constant linear resistance at a given control voltage.
Fig.10. JFET characteristics and drain-source
resistance with feedback applied as shown in the
simulation circuit in Fig.9.
Practical Electronics | September | 2022
47
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